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BLF574
HF / VHF power LDMOS transistor
Rev. 01 -- 8 December 2008 Preliminary data sheet
1. Product profile
1.1 General description
A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Table 1. Application information f (MHz) CW 225 108 VDS (V) 50 50 PL (W) 500 600 Gp (dB) 26.5 27.5 D (%) 70 73
Mode of operation
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 1000 mA: N Average output power = 500 W N Power gain = 26.5 dB N Efficiency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (10 MHz to 500 MHz) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
I Industrial, scientific and medical applications I Broadcast transmitter applications
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source
[1]
Simplified outline
1 2 5
Graphic symbol
1
3 3 4 4 5
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name BLF574 Description flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Version SOT539A Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 110 +11 56 +150 225 Unit V V A C C
5. Thermal characteristics
Table 5. Symbol Rth(j-c)
[1]
Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 400 W Typ 0.23 Unit K/W
Rth(j-c) is measured under RF conditions.
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Preliminary data sheet
Rev. 01 -- 8 December 2008
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NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
6. Characteristics
Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs Ciss Coss gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VDS = 10 V; ID = 250 mA VDS = 50 V; ID = 500 mA VGS = 0 V; VDS = 50 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 12.5 A Min Typ Max Unit 110 1.25 1.7 29 V 2.25 V 2.8 A A V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.5 mA
1.35 1.85 2.35 V 37.5 17
280 nA S pF pF pF
drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 8.33 A feedback capacitance input capacitance output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz
0.14 1.5 204 72 -
Table 7. RF characteristics Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 1000 mA for total device; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Gp RLin D power gain input return loss drain efficiency Conditions PL = 400 W PL = 400 W PL = 400 W Min Typ Max Unit 25 13 66 26.5 28 20 70 dB dB %
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Preliminary data sheet
Rev. 01 -- 8 December 2008
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NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
500 Coss (pF) 400
001aaj126
300
200
100
0 0 10 20 30 40 50 VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values per section
6.1 Ruggedness in class-AB operation
The BLF574 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 1000 mA; PL = 400 W; f = 225 MHz.
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Preliminary data sheet
Rev. 01 -- 8 December 2008
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NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
7. Application information
7.1 RF performance
RF performance in a 500 W application circuit at 225 MHz.
7.1.1 1-Tone CW
001aaj127 001aaj128
30 Gp (dB) 28 Gp 26
80 D (%) 60
30 Gp (dB) 28
(7) (6) (5)
D
40
26
(4) (3) (2) (1)
24
20
24
22 0 200 400 PL(PEP) (W)
0 600
22 0 100 200 300 400 500 PL (W)
VDS = 50 V; IDq = 1000 mA; f = 225 MHz.
VDS = 50 V; f = 225 MHz. (1) IDq = 400 mA (2) IDq = 600 mA (3) IDq = 800 mA (4) IDq = 1000 mA (5) IDq = 1200 mA (6) IDq = 1400 mA (7) IDq = 1800 mA
Fig 2.
Power gain and drain efficiency as functions of load power; typical values
Fig 3.
Power gain as function of load power; typical values
BLF574_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
5 of 18
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
60 PL (dBm) 58 Ideal PL PL 56
001aaj129
(1)
54
52
50 24 26 28 30 32 34 Ps (dBm)
VDS = 50 V; IDq = 1000 mA; f = 225 MHz. (1) PL(1dB) = 57.32 dBm (540 W)
Fig 4.
Load power as function of source power; typical values
7.1.2 2-Tone CW
001aaj130 001aaj131
30 Gp (dB) 28
80 D (%) 60
0 IMD3 (dBc) -20
D
(1) (2) (3)
Gp 26 40 -40
(4) (5)
24
20
-60
22 0 200 400
0 600 800 PL(PEP) (W)
-80 0 200 400 600 800 PL(PEP) (W)
VDS = 50 V; IDq = 1000 mA; f1 = 224.95 MHz; f2 = 225.05 MHz.
VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz. (1) IDq = 600 mA (2) IDq = 800 mA (3) IDq = 1000 mA (4) IDq = 1200 mA (5) IDq = 1400 mA
Fig 5.
Power gain and drain efficiency as functions of peak envelope load power; typical values
Fig 6.
Third order intermodulation distortion as a function of peak envelope load power; typical values
BLF574_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
6 of 18
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
7.1.3 Application circuit
Table 8. List of components For application circuit, see Figure 7. Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. Component Description C1, C2, C23, C24 C3 C4,C5 C6, C9 C7, C8, C10, C11 C12, C16 C13, C15 C14 C17, C19 C18 C20, C22 C21 L1, L2, L3, L4 L5, L6 L7, L8, L9, L10 L11, L12 R1, R2 R3, R4 T1, T2, T3, T4
[1]
Value
[1]
Remarks
multilayer ceramic chip capacitor 100 pF multilayer ceramic chip capacitor 24 pF multilayer ceramic chip capacitor 39 pF multilayer ceramic chip capacitor 4.7 F multilayer ceramic chip capacitor 1 nF electrolytic capacitor 220 F; 63 V
[1] [1]
TDK4532X7R1E475Mt020U
[1]
multilayer ceramic chip capacitor 62 pF multilayer ceramic chip capacitor 15 pF multilayer ceramic chip capacitor 47 pF multilayer ceramic chip capacitor 33 pF multilayer ceramic chip capacitor 10 pF multilayer ceramic chip capacitor 18 pF 3 turns 1 mm copper wire stripline stripline stripline metal film resistor metal film resistor semi rigid coax D = 3 mm; length = 3 mm 10 ; 0.6 W 3 ; 0.6 W 50 ; 120 mm
[1] [1] [1] [1] [1] [1]
(L x W) 125 mm x 7 mm (L x W) 8 mm x 15 mm (L x W) 132 mm x 7 mm
EZ-141-AL-TP-M17
American Technical Ceramics type 100B or capacitor of same quality.
BLF574_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
7 of 18
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
L1 R3
T1
C6 C7 R1
C10
+
T3
C12 L2 C13 C17 C20 C23 C24
C1 C2
C3
C4 C5
L6 L5
L8 L7
L9 L10
C14 C15
L11 L12
C18
C21 C22
C19
L3 R2 C8 C16
T2
C9
C11 R4 L4
+
T4
001aaj132
Fig 7.
Component layout for class-AB application circuit
BLF574_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
8 of 18
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
7.2 Reliability
105 Years 104
(1) (2) (3) (4) (5) (6)
001aaj133
103
102
(7) (8) (9) (10) (11)
10
1 0 4 8 12 16 Idc (A) 20
TTF (0.1 % failure fraction). (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C
Fig 8.
BLF574 electromigration (ID, total device)
BLF574_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
9 of 18
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
8. Test information
8.1 Impedance information
Table 9. Typical impedance Simulated ZS and ZL test circuit impedances. f MHz 225 ZS 3.2 + j2.5 ZL 7.5 + j4.0
drain ZL gate ZS
001aaf059
Fig 9.
Definition of transistor impedance
BLF574_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
10 of 18
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
8.2 RF performance
The following figures are measured in a class-AB production test circuit.
8.2.1 1-Tone CW
001aaj134 001aaj135
30 Gp (dB) 28 D
80 D (%) 60
30 Gp (dB) 28
(7) (6) (5)
Gp 26 40 26
(4) (3) (2) (1)
24
20
24
22 0 100 200 300
0 400 500 PL (W)
22 0 100 200 300 400 500 PL (W)
VDS = 50 V; IDq = 1000 mA; f = 225 MHz.
VDS = 50 V; f = 225 MHz. (1) IDq = 400 mA (2) IDq = 600 mA (3) IDq = 800 mA (4) IDq = 1000 mA (5) IDq = 1200 mA (6) IDq = 1400 mA (7) IDq = 1800 mA
Fig 10. Power gain and drain efficiency as functions of load power; typical values
Fig 11. Power gain as function of load power; typical values
BLF574_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
11 of 18
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
60 PL (dBm) 58 ideal PL
(1)
001aaj136
56
PL
54
52
50 24 26 28 30 32 34 Ps (dBm)
VDS = 50 V; IDq = 1000 mA; f = 225 MHz. (1) PL(1dB) = 56.43 dBm (440 W)
Fig 12. Load power as function of source power; typical values
8.2.2 2-Tone CW
001aaj137 001aaj138
30 Gp (dB) 28 D
80 D (%) 60
0 IMD3 (dBc) -20
(1) (2) (3)
Gp 26 40 -40
(4) (5)
24
20
-60
22 0 100 200 300 400 500 PL(PEP) (W)
0 600
-80 0 100 200 300 400 500 600 PL(PEP) (W)
VDS = 50 V; IDq = 1000 mA; f1 = 224.95 MHz; f2 = 225.05 MHz.
VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz. (1) IDq = 600 mA (2) IDq = 800 mA (3) IDq = 1000 mA (4) IDq = 1200 mA (5) IDq = 1400 mA
Fig 13. Power gain and drain efficiency as functions of peak envelope load power; typical values
Fig 14. Third order intermodulation distortion as a function of peak envelope load power; typical values
BLF574_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
12 of 18
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
8.2.3 Test circuit
Table 10. List of components For production test circuit, see Figure 15 and Figure 16. Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. Component Description C1, C2, C20, C21 C3 C4,C5 C6, C7, C10, C11 C8, C9 C12, C13 C14, C15 C16 C17 C18, C19 C22 C23, C24 L1, L2, L3, L4 L5, L6 L7, L8, L9, L10 L11, L12 R1, R2 R3, R4 T1, T2, T3, T4
[1]
Value 100 pF 24 pF 39 pF 1 nf 4.7 F 220 F; 63 V 47 pf 33 pF 18 pF 10 pF 15 pF 62 pF D = 3 mm; length = 2 mm 10 ; 0.6 W 3 ; 0.6 W 50 ; 120 mm
[1] [1] [1] [1] [1] [1] [1]
Remarks
multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor 3 turns 1 mm copper wire stripline stripline stripline metal film resistor metal film resistor semi rigid coax
[1] [1] [1]
[1]
TDK4532X7R1E475Mt020U
(L x W) 125 mm x 7 mm (L x W) 8 mm x 15 mm (L x W) 132 mm x 7 mm
EZ-141-AL-TP-M17
American Technical Ceramics type 100B or capacitor of same quality.
BLF574_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
13 of 18
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
VDD
C12
VGG
C8 C7
R3
L3
C11
R2
L1
C14 T1 C1 input 50 C3 T2 C2 L5 L7 L10 C24 C15 L12 C19 C4 C5 L6 L8 L9 C22 L11 C21 T4 C16 C17 C23 C18 C20 T3 output 50
R1 C6 C9
L2 C10
VGG
L4
L4
C13
VDD
001aaj139
Fig 15. Class-AB common-source production test circuit
L3 R3
T1
C8 C7 R2 L1
C11 C12 C14 C18 C17
T3
C23
C1
C3
C4 C5
C22
C16
C20
11 mm
C2
37 mm
11 mm
C24 L2 R1 C6 C10 R4 L4 C13 C15
5 mm 3 mm
C19 C21
T2
C9
T4
001aaj140
Fig 16. Component layout for class-AB production test circuit
BLF574_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
14 of 18
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
9. Package outline
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A
D
A F D1
U1 q H1 C
B
w2 M C M
c
1
2
H U2
p
E1 w1 M A M B M
E
5
L A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A b c D D1 e E E1 9.53 9.27 F H H1 L p 3.30 3.05 Q 2.31 2.01 q 35.56 U1 U2 w1 w2 0.51 w3 0.25
9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96
1.75 17.12 25.53 3.73 1.50 16.10 25.27 2.72
41.28 10.29 0.25 41.02 10.03
0.210 0.465 0.006 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.156 0.455 0.003 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079 1.615 0.395
OUTLINE VERSION SOT539A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 00-03-03
Fig 17. Package outline SOT539A
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Preliminary data sheet
Rev. 01 -- 8 December 2008
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NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
10. Abbreviations
Table 11. Acronym CW EDGE GSM HF LDMOS LDMOST RF TTF VHF VSWR Abbreviations Description Continuous Wave Enhanced Data rates for GSM Evolution Global System for Mobile communications High Frequency Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Time To Failure Very High Frequency Voltage Standing-Wave Ratio
11. Revision history
Table 12. BLF574_1 Revision history Release date 20081208 Data sheet status Preliminary data sheet Change notice Supersedes Document ID
BLF574_1
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Preliminary data sheet
Rev. 01 -- 8 December 2008
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NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
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(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
17 of 18
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.1.1 7.1.2 7.1.3 7.2 8 8.1 8.2 8.2.1 8.2.2 8.2.3 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 7 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Impedance information . . . . . . . . . . . . . . . . . . 10 RF performance . . . . . . . . . . . . . . . . . . . . . . . 11 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 December 2008 Document identifier: BLF574_1

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